TAJD227K002RNJ_TAJD227K002RNJ Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, it also provides Fenghua resistance-capacitance sense, long-crystal two-transistor MOS transistors, Epson active and passive crystal oscillators, etc.

TAJD227K002RNJ_TAJD227K002RNJ

TAJD476K016RNJ

057N08N 057N08NS 05852- 06000,, 06031.5K5%_.

FDS6990-NL HAT2092R HAT2092RJ IRF8313TRPBF MDS5601URH.

040N06N 042N03L 042N03MS 043N03MS 045N10N.

06031.8M5%_0603100K5%_0603100R5%_060310K1%_060310K5%_.

TAJD227K002RNJ_TAJD227K002RNJ

TAJB334K050RNJ

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYH343 BYM3411 BYP342 BYS342 BYM345.

Let’s talk about the characteristics of MOS/CMOS integrated circuits first: the manufacturing process is relatively simple, the yield is high, the power consumption is low, the logic circuit is relatively simple, the integration degree is high, and the anti-interference ability is strong, especially suitable for large-scale integrated circuits. .

The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

TAJD227K002RNJ_TAJD227K002RNJ

MOSFETs are used in switching power supplies, ballasts, high-frequency induction heating, high-frequency inverter welding machines, communication power supplies and other high-frequency power supply fields; IGBTs are concentrated in welding machines, inverters, frequency converters, electroplating electrolytic power supplies, super Audio induction heating and other fields.

relevant information