TAJD226M035RNJ_TAJD226M035RNJ Introduction

Low-power mos is a planar structure. The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units.

TAJD226M035RNJ_TAJD226M035RNJ

TAJB226M010RNJ

TAJA226M010RNJ TAJA226M016RNJ TAJA334K035RNJ TAJA334K050RNJ TAJA334M035RNJ TAJA334M050RNJ TAJA335K006RNJ TAJA335K010RNJ TAJA335K016RNJ TAJA335K020RNJ .

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

The MOS tube is similar to the triode, except that the MOS tube is a voltage-controlled voltage type (voltage control), while the triode is a current-controlled current type (current control). . As for the use of MOS tube, there is a difference between N-type and P-type. For the application, we only need to know: 1. For N-type MOS tube, if the voltage of G is higher than that of S (there is a voltage difference between G and S, the specific level Look at the specific MOS tube), between D and S (the voltage direction D points to S) will be turned on. At this time, the distance between D and S is equivalent to a small resistance. If the distance between G and S is low (the specific level depends on The specific MOS tube), between D and S will be cut off. At this time, between D and S is equivalent to a large resistance, and current cannot flow.

The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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TAJB155M050RNJ

BYP32028 BYS32010 BYJ32027A BYH326 BYH323.

. N-type MOS tube has more application scenarios. Compared with P-type MOS tube, its advantages are as follows: 1. Faster switching speed 2. Higher withstand voltage 3. Larger current passing through. The following is a simple example of N-type MOS tube. The reference circuit of , when the G terminal is connected to a high level, the MOS tube D and S are turned on, at this time the MOS tube is turned on, the current of the motor can pass, and the motor rotates. When the G terminal is at a low level, the D and S cannot be turned on, and the motor cannot run.

The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed. MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

TAJD226M035RNJ_TAJD226M035RNJ

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

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