TAJD226M025RNJ_TAJD226M025RNJ Introduction

Low-power mos is a planar structure. The power mos used on electric vehicles is a three-dimensional structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units.

TAJD226M025RNJ_TAJD226M025RNJ

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STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

057N08N 057N08NS 05852- 06000,, 06031.5K5%_.

TAJA225M010RNJ TAJA225M016RNJ TAJA225M020RNJ TAJA225M025RNJ TAJA225M035RNJ TAJA226K004RNJ TAJA226K006RNJ TAJA226K010RNJ TAJA226M004RNJ TAJA226M006RNJ .

The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

BYI3245 BYN3226 BYN3232 BYS326 BYD32515Z.

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The switch has only two states, on and off, and the transistor and MOS tube work in three states, 1, cut-off, 2, linear amplification, 3, saturation (the base current continues to increase and the collector current does not increase).

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