TAJD225M050RNJ_TAJD225M050RNJ Introduction

MOS tubes are often used in hardware design. The following are N-type MOS tubes, including gate G, source S, and drain D.

TAJD225M050RNJ_TAJD225M050RNJ

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TPC8223-H UPA2750GR 4936 9936 4228GM.

The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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The MOS tube is similar to the triode, except that the MOS tube is a voltage-controlled voltage type (voltage control), while the triode is a current-controlled current type (current control). . As for the use of MOS tube, there is a difference between N-type and P-type. For the application, we only need to know: 1. For N-type MOS tube, if the voltage of G is higher than that of S (there is a voltage difference between G and S, the specific level Look at the specific MOS tube), between D and S (the voltage direction D points to S) will be turned on. At this time, the distance between D and S is equivalent to a small resistance. If the distance between G and S is low (the specific level depends on The specific MOS tube), between D and S will be cut off. At this time, between D and S is equivalent to a large resistance, and current cannot flow.

TAJD225M050RNJ_TAJD225M050RNJ

TAJA684K025RNJ

BYH343 BYM3411 BYP342 BYS342 BYM345.

1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

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TAJD225M050RNJ_TAJD225M050RNJ

The turn-on sequence can be divided into four time periods to~t1, t1~t2, t2~t3, and t3~t4, and these four time periods have different equivalent circuits.

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