TAJD155M050RNJ_TAJD155M050RNJ Introduction

N-channel MOS transistor Metal-Oxide-Semiconductor (Metal-Oxide-Semiconductor) transistors are referred to as MOS transistors, and are divided into P-type MOS transistors and N-type MOS transistors. An integrated circuit composed of a MOS tube is called a MOS integrated circuit, and a complementary MOS integrated circuit composed of a PMOS tube and an NMOS tube is a CMOS integrated circuit.

TAJD155M050RNJ_TAJD155M050RNJ

TAJD156K035RNJ

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

060310R5%_060312K5%_060315K1%_060315K5%_0603180K5%_.

The MOS tube is similar to the triode, except that the MOS tube is a voltage-controlled voltage type (voltage control), while the triode is a current-controlled current type (current control). . As for the use of MOS tube, there is a difference between N-type and P-type. For the application, we only need to know: 1. For N-type MOS tube, if the voltage of G is higher than that of S (there is a voltage difference between G and S, the specific level Look at the specific MOS tube), between D and S (the voltage direction D points to S) will be turned on. At this time, the distance between D and S is equivalent to a small resistance. If the distance between G and S is low (the specific level depends on The specific MOS tube), between D and S will be cut off. At this time, between D and S is equivalent to a large resistance, and current cannot flow.

TAJA225M010RNJ TAJA225M016RNJ TAJA225M020RNJ TAJA225M025RNJ TAJA225M035RNJ TAJA226K004RNJ TAJA226K006RNJ TAJA226K010RNJ TAJA226M004RNJ TAJA226M006RNJ .

TAJD155M050RNJ_TAJD155M050RNJ

TAJC107M016RNJ

Let’s talk about the characteristics of MOS/CMOS integrated circuits first: the manufacturing process is relatively simple, the yield is high, the power consumption is low, the logic circuit is relatively simple, the integration degree is high, and the anti-interference ability is strong, especially suitable for large-scale integrated circuits. .

060322R5%_0603270K5%_0603270R5%_060327K5%_0603330R5%_.

If the voltage area of the GPIO that controls G is 1.8V, then when the GPIO is high, it is 1.8V, and the GS is 1.8-2.8=-1V, and the mos tube is turned on and cannot be turned off. In this case, the GPIO cannot control the on and off of the mos tube. Then the high level of the GPIO connected to G must be above 2.8-0.4=2.4V, so that the mos tube can be turned off, and the low level can turn the mos tube on. When GPIO is low, if 0.1V, then GS is 0.1-2.8=-2.7V, and the mos tube is turned on.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

TAJD155M050RNJ_TAJD155M050RNJ

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

relevant information