TAJD108M004RNJ_TAJD108M004RNJ Introduction

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

TAJD108M004RNJ_TAJD108M004RNJ

TAJC156K010RNJ

TAJA226M010RNJ TAJA226M016RNJ TAJA334K035RNJ TAJA334K050RNJ TAJA334M035RNJ TAJA334M050RNJ TAJA335K006RNJ TAJA335K010RNJ TAJA335K016RNJ TAJA335K020RNJ .

The MOS tube is similar to the triode, except that the MOS tube is a voltage-controlled voltage type (voltage control), while the triode is a current-controlled current type (current control). . As for the use of MOS tube, there is a difference between N-type and P-type. For the application, we only need to know: 1. For N-type MOS tube, if the voltage of G is higher than that of S (there is a voltage difference between G and S, the specific level Look at the specific MOS tube), between D and S (the voltage direction D points to S) will be turned on. At this time, the distance between D and S is equivalent to a small resistance. If the distance between G and S is low (the specific level depends on The specific MOS tube), between D and S will be cut off. At this time, between D and S is equivalent to a large resistance, and current cannot flow.

STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.

TAJD108M004RNJ_TAJD108M004RNJ

TAJE106M035RNJ

1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed. MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits.

The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

BYP336 BYT337 BYS334 BYS345 BYP346.

TAJD108M004RNJ_TAJD108M004RNJ

MOSFETs are used in switching power supplies, ballasts, high-frequency induction heating, high-frequency inverter welding machines, communication power supplies and other high-frequency power supply fields; IGBTs are concentrated in welding machines, inverters, frequency converters, electroplating electrolytic power supplies, super Audio induction heating and other fields.

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