TAJD108M002RNJ_TAJD108M002RNJ Introduction

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

TAJD108M002RNJ_TAJD108M002RNJ

TAJB686K010RNJ

TAJA226M010RNJ TAJA226M016RNJ TAJA334K035RNJ TAJA334K050RNJ TAJA334M035RNJ TAJA334M050RNJ TAJA335K006RNJ TAJA335K010RNJ TAJA335K016RNJ TAJA335K020RNJ .

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

040N06N 042N03L 042N03MS 043N03MS 045N10N.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

TAJD108M002RNJ_TAJD108M002RNJ

TAJC477K002RNJ

BYP336 BYT337 BYS334 BYS345 BYP346.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

1. The P-channel mos tube is used as a switch, and the gate-source threshold is -0.4V. When the gate-source voltage difference is -0.4V, DS will be turned on. If S is 2.8V and G is 1.8V, then GS =-1V, the mos tube is turned on, D is 2.8V If S is 2.8V, G is 2.8V, VGSw then the mos tube is not turned on, D is 0V, so if 2.8V is connected to S, the mos tube must be turned on Power is supplied to the system, which is connected to D and controlled with G.

Let’s talk about the characteristics of MOS/CMOS integrated circuits first: the manufacturing process is relatively simple, the yield is high, the power consumption is low, the logic circuit is relatively simple, the integration degree is high, and the anti-interference ability is strong, especially suitable for large-scale integrated circuits. .

TAJD108M002RNJ_TAJD108M002RNJ

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

relevant information