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2022-09-23 17:35:14
TAJD106M050RNJ
TAJD106M050RNJ_TAJD106M050RNJ Introduction
In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .
TAJD106M050RNJ_TAJD106M050RNJ
TAJB476K010RNJ
FDS6990-NL HAT2092R HAT2092RJ IRF8313TRPBF MDS5601URH.
SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.
AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.
STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.
TAJD106M050RNJ_TAJD106M050RNJ
TAJB475M035RNJ
BYI3245 BYN3226 BYN3232 BYS326 BYD32515Z.
BYP32028 BYS32010 BYJ32027A BYH326 BYH323.
The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed. MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits.
BYM3312 BYM3312-X BYF333 BYP332 BYS332.
TAJD106M050RNJ_TAJD106M050RNJ
NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.
relevant information