TAJD106M025RNJ_TAJD106M025RNJ Introduction

MOS tubes are often used in hardware design. The following are N-type MOS tubes, including gate G, source S, and drain D.

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TAJE687K004RNJ

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For the P-type MOS tube, if the voltage of S is higher than that of G (there is a voltage difference between G and S, the specific level depends on the specific MOS tube), the connection between D and S will be conducted (the voltage direction S points to D), this At this time, the gap between D and S is equivalent to a very small resistance. If the gap between G and S is low (the specific level depends on the specific MOS tube), the gap between D and S will be cut off. At this time, the gap between D and S is equivalent to a very small resistance. If the resistance is too large, current cannot flow.

STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

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TAJD106M025RNJ_TAJD106M025RNJ

TAJE107K025RNJ

If the voltage area of the GPIO that controls G is 1.8V, then when the GPIO is high, it is 1.8V, and the GS is 1.8-2.8=-1V, and the mos tube is turned on and cannot be turned off. In this case, the GPIO cannot control the on and off of the mos tube. Then the high level of the GPIO connected to G must be above 2.8-0.4=2.4V, so that the mos tube can be turned off, and the low level can turn the mos tube on. When GPIO is low, if 0.1V, then GS is 0.1-2.8=-2.7V, and the mos tube is turned on.

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. N-type MOS tube has more application scenarios. Compared with P-type MOS tube, its advantages are as follows: 1. Faster switching speed 2. Higher withstand voltage 3. Larger current passing through. The following is a simple example of N-type MOS tube. The reference circuit of , when the G terminal is connected to a high level, the MOS tube D and S are turned on, at this time the MOS tube is turned on, the current of the motor can pass, and the motor rotates. When the G terminal is at a low level, the D and S cannot be turned on, and the motor cannot run.

BYH343 BYM3411 BYP342 BYS342 BYM345.

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t0-t1: C GS1 starts charging, the gate voltage has not reached V GS(th), the conduction channel is not formed, and the MOSFET is still off.

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