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2022-09-23 17:35:14
FF300R12KT4
Manufacturer: Infineon
Product Category: IGBT Module
RoHS: Details
Product:IGBT Silicon Modules
Configuration: Dual
Collector-emitter maximum voltage VCEO: 1200 V
Collector-emitter saturation voltage: 2.1 V
Continuous collector current at 25 C: 450 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1600 W
Package/Case: 62 mm
Minimum operating temperature:- 40 C
Maximum operating temperature: + 150 C
Package:Tray
Trademark: Infineon Technologies
Gate/Emitter Maximum Voltage: 20 V
Mounting style: Chassis Mount
Product Type:IGBT Modules
Series: Trench/Fieldstop IGBT4 - T4
10
Subcategory: IGBTs
Technology: Si
Part No. Alias: SP000370607 FF300R12KT4HOSA1
Unit weight: 335 g