IPD50N06S4L-08...

  • 2022-09-23 17:35:14

IPD50N06S4L-08 TO252 SMD FET 60V 50A

IPD50N06S4L-08Manufacturer: Infineon

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case:TO-252-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 60 V

Id-Continuous Drain Current: 50 A

Rds On-drain-source on-resistance: 6.3 mOhms

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Vgs th - gate-source threshold voltage: 1.2 V

Qg-gate charge: 64 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power Dissipation: 71 W

Channel Mode:Enhancement

Brand Name: OptiMOS

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: Infineon Technologies

Configuration:Single

Fall Time: 8 ns

Height: 2.3 mm

Length: 6.5 mm

Product Type:MOSFET

Rise time: 2 ns

Series: OptiMOS-T2

2500

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 45 ns

Typical turn-on delay time: 9 ns

Width: 6.22 mm

Part Number Alias: IPD5N6S4L8XT SP000374322 IPD50N06S4L08ATMA1

Unit weight: 330 mg