TAJC686M006RNJ_TAJC686M006RNJ Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, it also provides Fenghua resistance-capacitance sense, long-crystal two-transistor MOS transistors, Epson active and passive crystal oscillators, etc.

TAJC686M006RNJ_TAJC686M006RNJ

TLJA227M004R1100

TAJA225M010RNJ TAJA225M016RNJ TAJA225M020RNJ TAJA225M025RNJ TAJA225M035RNJ TAJA226K004RNJ TAJA226K006RNJ TAJA226K010RNJ TAJA226M004RNJ TAJA226M006RNJ .

TPC8223-H UPA2750GR 4936 9936 4228GM.

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

06031.8M5%_0603100K5%_0603100R5%_060310K1%_060310K5%_.

TAJC686M006RNJ_TAJC686M006RNJ

TAJA155K016RNJ

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

0603180R5%_06031M5%_06032.2K5%_0603220R5%_060322K5%_.

051N15N5MOS 052N06L 053P04-518 054NE8N 057N06N.

. N-type MOS tube has more application scenarios. Compared with P-type MOS tube, its advantages are as follows: 1. Faster switching speed 2. Higher withstand voltage 3. Larger current passing through. The following is a simple example of N-type MOS tube. The reference circuit of , when the G terminal is connected to a high level, the MOS tube D and S are turned on, at this time the MOS tube is turned on, the current of the motor can pass, and the motor rotates. When the G terminal is at a low level, the D and S cannot be turned on, and the motor cannot run.

TAJC686M006RNJ_TAJC686M006RNJ

In general, the advantage of MOSFET is that it has good high-frequency characteristics, and the operating frequency can reach hundreds of kHz and up to MHz. The disadvantage is that the on-resistance is large in high-voltage and high-current applications, and the power consumption is large; while IGBT is in low-frequency and high-power applications. It has excellent performance under low on-resistance and high withstand voltage.

relevant information