TAJC686K010RNJ_TAJC686K010RNJ Introduction

N-channel MOS transistor Metal-Oxide-Semiconductor (Metal-Oxide-Semiconductor) transistors are referred to as MOS transistors, and are divided into P-type MOS transistors and N-type MOS transistors. An integrated circuit composed of a MOS tube is called a MOS integrated circuit, and a complementary MOS integrated circuit composed of a PMOS tube and an NMOS tube is a CMOS integrated circuit.

TAJC686K010RNJ_TAJC686K010RNJ

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The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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For the P-type MOS tube, if the voltage of S is higher than that of G (there is a voltage difference between G and S, the specific level depends on the specific MOS tube), the connection between D and S will be conducted (the voltage direction S points to D), this At this time, the gap between D and S is equivalent to a very small resistance. If the gap between G and S is low (the specific level depends on the specific MOS tube), the gap between D and S will be cut off. At this time, the gap between D and S is equivalent to a very small resistance. If the resistance is too large, current cannot flow.

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If the voltage area of the GPIO that controls G is 1.8V, then when the GPIO is high, it is 1.8V, and the GS is 1.8-2.8=-1V, and the mos tube is turned on and cannot be turned off. In this case, the GPIO cannot control the on and off of the mos tube. Then the high level of the GPIO connected to G must be above 2.8-0.4=2.4V, so that the mos tube can be turned off, and the low level can turn the mos tube on. When GPIO is low, if 0.1V, then GS is 0.1-2.8=-2.7V, and the mos tube is turned on.

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The source S of the P channel is connected to the input, the drain D is connected to the output, and the N channel is the opposite.

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In general, the advantage of MOSFET is that it has good high-frequency characteristics, and the operating frequency can reach hundreds of kHz and up to MHz. The disadvantage is that the on-resistance is large in high-voltage and high-current applications, and the power consumption is large; while IGBT is in low-frequency and high-power applications. It has excellent performance under low on-resistance and high withstand voltage.

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