TAJC686K006RNJ_TAJC686K006RNJ Introduction

MOS tubes are often used in hardware design. The following are N-type MOS tubes, including gate G, source S, and drain D.

TAJC686K006RNJ_TAJC686K006RNJ

TAJB686M010RNJ

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The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

BYP35066A BYP35014A BYF35526A BYP36078A BYI362.

TAJC686K006RNJ_TAJC686K006RNJ

TAJB336K004RNJ

The principle of the PMOS gate circuit is exactly the same as that of the NMOS circuit, but the polarity of the power supply is reversed. MOS integrated circuits include: NMOS circuits composed of NMOS tubes, PMOS circuits composed of PMOS tubes, and complementary MOS circuits composed of NMOS and PMOS tubes, namely CMOS circuits.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

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TAJC686K006RNJ_TAJC686K006RNJ

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

relevant information