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2022-09-23 17:35:14
IPD50N04S4-10 Original N-channel field effect tube 40V 50A SMD TO252 4N0410
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case:TO-252-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 40 V
Id-Continuous Drain Current: 50 A
Rds On-drain-source on-resistance: 9.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 3 V
Qg-gate charge: 18.2 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 41 W
Channel Mode:Enhancement
Qualification: AEC-Q101
Brand Name: OptiMOS
Package:Reel
Package:Cut Tape
Trademark: Infineon Technologies
Configuration:Single
Fall Time: 5 ns
Height: 2.3 mm
Length: 6.5 mm
Product Type:MOSFET
Rise time: 7 ns
Series: OptiMOS-T2
2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 4 ns
Typical turn-on delay time: 5 ns
Width: 6.22 mm
Part Number Alias: IPD5N4S41XT SP000711466 IPD50N04S410ATMA1
Unit weight: 330 mg