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2022-09-23 17:35:14
IRLHS6376 MOSFET FET 30V 1 N-CH HEXFET 2.8nC
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: PQFN-6
Transistor Polarity: N-Channel
Number of channels: 2 Channel
Vds-drain-source breakdown voltage: 30 V
Id-Continuous Drain Current: 3.6 A
Rds On-drain-source on-resistance: 63 mOhms
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Vgs th - gate-source threshold voltage: 1.8 V
Qg-gate charge: 2.8 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 1.5 W
Channel Mode:Enhancement
Brand Name: StrongIRFET
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Infineon / IR
Configuration: Dual
Height: 0.9 mm
Length: 2 mm
Product Type:MOSFET
Series:Dual N-Channel
4000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Width: 2 mm
Part number alias: IRLHS6376TRPBF SP001573000
Unit weight: 60.142 mg