BSC060P03NS3E...

  • 2022-09-23 17:35:14

BSC060P03NS3EG original genuine spot MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3

BSC060P03NS3EGManufacturer: Infineon

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package / Box: TDSON-8

Transistor Polarity: P-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 30 V

Id-Continuous Drain Current: 100 A

Rds On-Drain Source On Resistance: 6 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 1.9 V

Qg-gate charge: 61 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd - Power Dissipation: 83 W

Channel Mode:Enhancement

Brand Name: OptiMOS

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: Infineon Technologies

Configuration:Single

Fall Time: 34 nS

Forward Transconductance - Min: 32 S

Height: 1.27 mm

Length: 5.9 mm

Product Type:MOSFET

Rise time: 139 nS

Series: OptiMOS P3

5000

Subcategory: MOSFETs

Transistor Type: 1 P-Channel

Typical turn-off delay time: 66 nS

Typical turn-on delay time: 15 ns

Width: 5.15 mm

Part Number Alias: SP000472984 BSC6P3NS3EGXT BSC060P03NS3EGATMA1

Unit weight: 100 mg