STP18N65M2

  • 2022-09-23 17:35:14

STP18N65M2

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Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

manufacturer

STMicroelectronics

series

MDmesh? M2

Package

pipe fittings

Part status

in stock

FET type

N channel

technology

MOSFET (Metal Oxide)

Drain-Source Voltage (Vdss)

650V

Current at 25°C - Continuous Drain (Id)

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

On-resistance (max) at different Id, Vgs

330 milliohms @ 6A, 10V

Vgs(th) (maximum) at different Ids

4V @ 250μA

Gate charge (Qg) at different Vgs (max)

20nC @ 10V

Vgs (max)

±25V

Input capacitance (Ciss) at different Vds (max)

770 pF @ 100 V

FET function

-

Power dissipation (max)

110W (Tc)

Operating temperature

150°C (TJ)

installation type

through hole

Supplier Device Packaging

TO-220

Package/Enclosure

TO-220-3

Basic product number

STP18