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2022-09-23 17:35:14
BSC109N10NS3G TDSON-8 IR ballast field effect tube MOS tube
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package / Box: TDSON-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 63 A
Rds On-drain-source on-resistance: 10.9 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 3.5 V
Qg-gate charge: 35 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 78 W
Channel Mode:Enhancement
Brand Name: OptiMOS
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Infineon Technologies
Configuration:Single
Fall Time: 5 ns
Forward Transconductance - Min: 29 S
Height: 1.27 mm
Length: 5.9 mm
Product Type:MOSFET
Rise time: 7 ns
Series: OptiMOS 3
5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 19 ns
Typical turn-on delay time: 12 ns
Width: 5.15 mm
Part number alias: SP000778132 BSC19N1NS3GXT BSC109N10NS3GATMA1
Unit weight: 300 mg