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2022-09-23 17:35:14
SI3552DV-T1-GE3 package SOT23-6 N+P 30V MOS field effect tube
Manufacturer: Vishay
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: TSOP-6
Transistor Polarity: N-Channel, P-Channel
Number of channels: 2 Channel
Vds-drain-source breakdown voltage: 30 V
Id-Continuous Drain Current: 2.5 A, 1.8 A
Rds On-Drain Source On Resistance: 105 mOhms, 200 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1 V
Qg-gate charge: 3.2 nC, 3.6 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 1.15 W
Channel Mode:Enhancement
Brand Name: TrenchFET
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Vishay Semiconductors
Configuration: Dual
Fall Time: 5 ns, 7 ns
Forward Transconductance - Min: 4.3 S, 2.4 S
Product Type:MOSFET
Rise time: 9 ns, 12 ns
Series:SI3
3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel, 1 P-Channel
Typical turn-off delay time: 13 ns, 12 ns
Typical turn-on delay time: 7 ns, 8 ns
Part number alias: SI3552DV-GE3
Unit weight: 20 mg