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2022-09-23 17:35:14
BSC060N10NS3G TDSON-8 N channel high current low internal resistance MOS field effect tube original authentic
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package / Box: TDSON-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 90 A
Rds On-drain-source on-resistance: 5.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 68 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode:Enhancement
Brand Name: OptiMOS
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: Infineon Technologies
Configuration:Single
Fall Time: 12 ns
Forward Transconductance - Min: 43 S
Height: 1.27 mm
Length: 5.9 mm
Product Type:MOSFET
Rise time: 16 ns
Series: OptiMOS 3
5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical turn-off delay time: 45 ns
Typical turn-on delay time: 20 ns
Width: 5.15 mm
Part number alias: BSC6N1NS3GXT SP000446584 BSC060N10NS3GATMA1
Unit weight: 100 mg