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2022-09-23 17:35:14
MOS FET SI2338DS-T1-GE3
Model: SI2338DS-T1-GE3
Manufacturer: VISHAY
Package: SOT-23
Lot number: 21+
Quantity: 30000
Price: Please contact us by phone or QQ to confirm the latest price
product properties
Type description choice?
Category Discrete Semiconductors Transistor - FET, MOSFET - Single
ManufacturerVishay Siliconix
Series TrenchFET?
Packaging Tape and Reel (TR) Cut Tape (CT) Digi-Reel® Custom Tape and Reel
Part status on sale
FET type N channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
On-resistance (max) at different Id, Vgs 28 milliohms @ 5.5A, 10V
Vgs(th) (max) at different Id 2.5V @ 250μA
Gate charge at different Vgs? (Qg) (max) 13 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) at Vds (Maximum) 424 pF @ 15 V
FET function-
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package SOT-23-3 (TO-236)
Package/Enclosure TO-236-3, SC-59, SOT-23-3
Basic product number SI2338
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