IGBTs are very suitable for applications such as AC motors, frequency converters, switching power supplies, lighting circuits, and traction drives. The body diode inside the IGBT is not parasitic, but is specially set up to protect the fragile reverse withstand voltage of the IGBT, also known as FWD (freewheeling diode). It is not difficult to judge whether there is a body diode inside the IGBT. You can use a multimeter to measure the C pole and E pole of the IGBT. If the IGBT is good and the resistance values measured at the C and E poles are infinite, it means that the IGBT has no body diode.

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TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

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The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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BYM3312 BYM3312-X BYF333 BYP332 BYS332.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

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t0-t1: C GS1 starts charging, the gate voltage has not reached V GS(th), the conduction channel is not formed, and the MOSFET is still off.

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