IPD60R3K3C6 O...

  • 2022-09-23 17:35:14

IPD60R3K3C6 Original Genuine MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS

IPD60R3K3C6 Manufacturer: STMicroelectronics

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case:TO-252-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 620 V

Id-Continuous Drain Current: 2.5 A

Rds On-Drain Source On Resistance: 2.5 Ohms

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - gate-source threshold voltage: 3.75 V

Qg-gate charge: 17 nC

Pd - Power Dissipation: 45 W

Brand Name: SuperMESH

Package:Reel

Trademark: STMicroelectronics

Configuration:Single

Fall Time: 27 ns

Product Type:MOSFET

Rise time: 7 ns

Series: STD3LN62K3

2500

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Unit weight: 330 mg