TAJB225M016RNJ_TAJB225M016RNJ Introduction

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

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. Structure of IGBT IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a compound semiconductor device composed of a transistor and a MOS transistor.

The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

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In general, the advantage of MOSFET is that it has good high-frequency characteristics, and the operating frequency can reach hundreds of kHz and up to MHz. The disadvantage is that the on-resistance is large in high-voltage and high-current applications, and the power consumption is large; while IGBT is in low-frequency and high-power applications. It has excellent performance under low on-resistance and high withstand voltage.

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