TAJB225K025RNJ_TAJB225K025RNJ Introduction

In electronic circuits, MOS tubes and IGBT tubes will often appear, and they can be used as switching elements. MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters, so why do some circuits use MOS tubes? And some circuits use IGBT tubes? . The difference between MOS tube and IGBT tube.

TAJB225K025RNJ_TAJB225K025RNJ

TAJC685M050RNJ

TPCS8205 TPCS8212 TSM6866SDCA RV UPA1852GR-9JG-A UT8205A.

. Structure of IGBT IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a compound semiconductor device composed of a transistor and a MOS transistor.

The ideal equivalent circuit of IGBT is shown in the figure below. IGBT is actually a combination of MOSFET and transistor triode. MOSFET has the disadvantage of high on-resistance, but IGBT overcomes this shortcoming, and IGBT still has low on-resistance at high voltage. . The IGBT is constructed by adding a layer to the drain of the MOSFET. In addition, for IGBTs and MOSFETs with similar power capacity, the speed of IGBTs may be slower than that of MOSFETs, because IGBTs have turn-off tailing time. Due to the long turn-off tailing time of IGBTs, the dead time will also be extended, which will affect the switching frequency. Structural features of MOS tube and IGBT The internal structure of MOS tube and IGBT tube is shown in the figure below.

060310R5%_060312K5%_060315K1%_060315K5%_0603180K5%_.

TAJB225K025RNJ_TAJB225K025RNJ

TAJC686K016RNJ

BYH343 BYM3411 BYP342 BYS342 BYM345.

BYI3245 BYN3226 BYN3232 BYS326 BYD32515Z.

060322R5%_0603270K5%_0603270R5%_060327K5%_0603330R5%_.

TAJA224K050RNJ TAJA224M035RNJ TAJA224M050RNJ TAJA225K006RNJ TAJA225K010RNJ TAJA225K016RNJ TAJA225K020RNJ TAJA225K025RNJ TAJA225K035RNJ TAJA225M006RNJ .

TAJB225K025RNJ_TAJB225K025RNJ

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

relevant information