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2022-09-20 05:00:00
LMC660 CMOS Four Movement is a amplifier
General description
lmc660 CMOS four lucky amplifiers is a single power operation. The working voltage from+5V to+15V and the rail -to -orbit output width and input include the co -mode range including ground. The limitations of performance that troubles the CMOS amplifier in the past is not the problem of this design. Enter VOS, drift and broadband noise and actual load voltage gain (2 kΩ and 600Ω) are equal to or better than the bipolar equivalent of extensive communication and acceptance. This chip is a national advanced bisodiacum CMOS process. For dual CMOS operations, see the LMC662 data table with the same function amplifier.
Features
Rail output amplitude
Specifying for 2 kΩ and 600Ω load
High -voltage gain: 126 decibel
Low input offset voltage: 3 MV
Low offset voltage drift: 1.3 Micro volt/degrees Celsius
Ultra -low input bias current: 2FA
Input covarrantion range includes included V n working range from+5V to+15V power supply
ISS 375 Weian/amplifier; independent V+N low incorrectness: 0.01%at 10 kHz
conversion conversion Speed: 1.1V/micro seconds
Can be used within the extension temperature range (-40 ° C to+125 ° C; very suitable for automotive applications
can be used for standard military drawing specifications
[123] Application
High -impedance buffer or front placement large device
Precision current voltage converter
Long -term integror
Sample maintenance circuit
[[123] Peak detector
Medical Device
Industrial Control
Automotive sensor
Absolute maximum rated value (Note 3)
Differential difference Input voltage ± power voltage
Power supply voltage 16V
output pair V+short circuit (Note 12)
output V-short circuit (note 1)
[123] Lead temperature
(welding, 10 seconds) 260 degrees Celsius
Storage temperature. The temperature range -65 ° C to+150 ° C
Input/output pin voltage (V+)+0.3V, (V negative electrode) -0.3 volts
output pin current ± 18 mia
Input pin current ± 5 mia
Power quotation Foot 35 mAh current
Power Consumption (Note 2)
Jacking temperature 150 303C
ESD tolerance (Note 8) 1000V
Rate -running value
Temperature range
LMC660AMJ/883,
LMC660AMD #8722 55 ° C ≤TJ≤+125 ° Clmc660ai 40 degrees C ≤TJ ≤+85 degrees C
lmc660 degrees Celsius 0 ≤TJ ≤+70 degrees Celsius
LMC660E 40 ° C ≤TJ ≤+125 ° C
Power voltage range 4.75V to 15.5V
Power consumption (Note 10)
Hot Block (θJa) (Note 11)
14 -needle ceramic dipping 90 ° C/W
14 -pin mold pressure DIP 85 ° C/W
14 -needle so 115∏∏ C/W
14 Side side iliac welding
Ceramics immersion 90 ° C/W
DC electrical feature
Unless otherwise regulations, it is guaranteed to guarantee TJ All limits of 25 degrees Celsius. Black body limit is suitable for extreme temperature. V+ 5V, V- 0V, VCM 1.5V, VO 2.5V, RL GT; 1M, unless there are other regulations.
Unless there are other regulations, all the limits of TJ 25 degrees Celsius are guaranteed. Black body limit is suitable for extreme temperature. V+ 5V, V- 0V, VCM 1.5V, VO 2.5V, RL GT; 1M, unless there are other regulations.
Unless there are other regulations, all the limits of TJ 25 degrees Celsius are guaranteed. Black body limit is suitable for extreme temperature. V+ 5V, V- 0V, VCM 1.5V, VO 2.5V, RL GT; 1M, unless there are other regulations.
Note 2: The maximum power consumption is the functions of TJ (MAX), θJa, and TA. The maximum allowable power consumption at any ambient temperature is pd (TJ (MAX) -ta)/θJa.
Note 3: Absolutely maximum rated value indicates the limit where the device may be damaged. When the work rated value indicates that when the device is in a state, the equipment tends to work normally.But do not guarantee specific performance restrictions. Please refer to the electrical characteristics of the guarantee specifications and test conditions. This guarantee specification is only applicable to the test conditions listed.
Note 4: Typical values represent the most likely parameter model. The limit is guaranteed by testing or association.
Note 5: V+ 15V, VCM 7.5V, RL connected to 7.5V, source pole test 7.5V ≤VO ≤ 11.5V, sinking test 2.5V ≤VO ≤ 7.5V.
Note 6: V+ 15V. As a voltage follower connection, there is a 10V step input. The specified number is the slower in the positive and negative conversion rate.
Note 7: Reference input. V+ 15V and RL 10kΩ are connected to V+/2. Each amplifier is motivated in sequence at a frequency of 1kHz to generate VO 13VPP.
Note 8: Human model, 1.5 kΩ connects 100 PF.
Note 9: Military RETS electrical test specifications can be provided according to the requirements. When printing, the LMC660AMJ/883 RETS specification fully meets the limits in this column of the black body. LMC660AMJ/883 can also be purchased in accordance with standard military drawings.
Note 10: For equipment running at high temperatures, it must be reduced according to the thermal resistance θja of PD (TJ TA)/θJa.
Note 11: All numbers are suitable for packaging directly welded to the PC board.
Note 12: When V+greater than 13V or reliability may be adversely affected, do not connect the output to V+.
Unless there are other regulations, typical performance characteristics vs ± 7.5V, TA 25 ℉
Unless otherwise regulations, typical performance characteristics vs vs ± 7.5V, TA 25 ° C (continued)
for the topology selected by LMC660, such as Figure 1 does not adopt traditional unit gain buffer output levels (compared to universal computing amplifiers); on the contrary, the output is obtained directly from the output of the input integror to allow orbit output to swing. Because of the tradition of the buffer, in maintaining the gain and stability of the high -transportation amplifier, it is necessary to bear whether the railway must be able to withstand the railway. These tasks are now responsible for the integrator. Due to these requirements, the integrator is an event in the phase of a complex and an embedded gain. This stage is a dual -feed (CF and CFF) compensation through a dedicated unit gain. In addition, the output part of the integral device is push -pull configuration for transporting heavy objects. When the entire amplifier path of the absorption current is the stage of obtaining first -level feedback, the source path contains four gain stages and two FED forward places.
The large signal voltage gain at the source pole is comparable to traditional bipolar computing amplifiers, even if the load is 600Ω. The gain at the time of sink is higher than that of most CMOS computing amplifiers to the additional gain stage; however, the gain (600Ω) gain will be reduced, such as the characteristics shown in the electrical diagram. 
The high input resistance of the LMC660 computing amplifier allows large feedback and source resistance values, and will not cause gain accuracy due to the load. However, the circuit will be particularly sensitive to its layout when these large value resistors are used.
Application prompts (continued)
Each amplifier has some capacitors between each input end and the differential capacitors between the exchange ground and the input end. When the amplifier is resistant, the input capacitor (and the additional capacitor sockets generated by the circuit board traces, etc.) and the feedback resistor are on the feedback path. In the following universal computing amplifier circuit, the frequency of Figure 2 is
. CS is the total capacitor input, including the amplifier input capacitance and any bandate capacitance from the IC socket (if you if the IC socket (if Use), circuit board trajectory, etc. RP is a parallel combination of RF and RIN. For the formula and all the formulas below, the formula is suitable for the configuration of reverse and non -inverse operations amplifiers. The frequency of feedback poles when the feedback resistance is less than a few KΩ, because CS is generally less than 10 PF. If the frequency of the feedback is much higher than the ideal " closed -loop bandwidth (the nominal closed -loop bandwidth of the CS)