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2022-09-23 17:35:14
FGH60N60SMD IGBT Transistor 600V/60A Field Stop IGBT ver. 2
FGH60N60SMD IGBT Transistor 600V/60A Field Stop IGBT ver. 2
product properties
Manufacturer: onsemi
Product Category: IGBT Transistor
Technology: Si
Package/Case: TO-247
Mounting Style: Through Hole
Collector-Emitter MAX Voltage VCEO: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Gate/Emitter MAX Voltage: 20 V
Continuous collector current at 25 C: 120 A
Pd-Power Dissipation: 600 W
Operating temperature: - 55 C to + 150 C
Series: FGH60N60SMD
Package: Tube
Trademark: onsemi / Fairchild
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Unit weight: 6.390 g