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2022-09-23 17:35:14
MMBT3906WT1G Bipolar Transistor - Bipolar Junction Transistor (BJT)
MMBT3906WT1G Bipolar Transistor - Bipolar Junction Transistor (BJT)
product properties
Manufacturer: onsemi
Product Category: Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style: SMD/SMT
Package/Case: SC-70-3
Transistor Polarity: PNP
Configuration: Single
Collector-Emitter MAX Voltage VCEO: - 40 V
Collector-Base Voltage VCBO: - 40 V
Emitter-Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: - 400 mV
MAX DC collector current: - 200 mA
Pd-Power Dissipation: 150 mW
Gain bandwidth product fT: 250 MHz
Operating temperature: - 55 C to + 150 C
Series: MMBT3906W
Package: Reel
Package: Cut Tape
Collector Continuous Current: - 0.2 A
DC Collector/Base Gain hfe Min: 60
Height: 0.85 mm
Length: 2.1 mm
Product Type: BJTs - Bipolar Transistors
Factory Packing Quantity: 3000
Subcategory: Transistors
Technology: Si
Width: 1.24 mm
Unit weight: 6.200 mg
Fortune Hotline: 15773539469
Consultation address/data address, QQ: 2853611909