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2022-09-23 17:35:14
FDC6301N printing 301 SOT23-6 double N-channel field effect transistor
Shenzhen Zongtian Technology Development Co., Ltd. distributes Infineon, IR, FAIRCHILD, ST, FUJI, TOSHIBA, SANYO and other international top brands,
Professional management of various FETs, triodes, IGBTs, thyristors, voltage regulator ICs, Schottky, fast recovery, DIP/SMD series,
Mainly used in lithium battery protection board/** brushless ESC, computer motherboard graphics card/brushless motor, solar/LED lighting power supply,
UPS power supply/electric vehicle controller, HID lamp/inverter, power adapter/switching power supply, ballast, automotive electronics, etc.
Installation style: SMD/SMT
Package/Case: SSOT-6
Transistor Polarity: N-Channel
Number of channels: 2 Channel
Vds-drain-source breakdown voltage: 25 V
Id-Continuous Drain Current: 220 mA
Rds On-Drain Source On Resistance: 3.8 Ohms
Vgs - Gate-Source Voltage: - 500 mV, + 8 V
Vgs th - gate-source threshold voltage: 1.5 V
Qg-gate charge: 490 pC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd-Power Dissipation: 900 mW
Channel Mode:Enhancement
Package:Reel
Package:Cut Tape
Package: MouseReel
Trademark: onsemi / Fairchild
Configuration: Dual
Fall Time: 4.5 ns
Forward Transconductance - Min: 0.25 S
Height: 1.1 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type:MOSFET
Rise time: 4.5 ns
Series: FDC6301N
3000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Type: FET
Typical turn-off delay time: 4 ns
Typical turn-on delay time: 5 ns
Width: 1.6 mm
Part number alias: FDC6301N_NL
Unit weight: 36 mg