FDC6301N printin...

  • 2022-09-23 17:35:14

FDC6301N printing 301 SOT23-6 double N-channel field effect transistor

FDC6301NShenzhen Zongtian Technology Development Co., Ltd. distributes Infineon, IR, FAIRCHILD, ST, FUJI, TOSHIBA, SANYO and other international top brands,

Professional management of various FETs, triodes, IGBTs, thyristors, voltage regulator ICs, Schottky, fast recovery, DIP/SMD series,

Mainly used in lithium battery protection board/** brushless ESC, computer motherboard graphics card/brushless motor, solar/LED lighting power supply,

UPS power supply/electric vehicle controller, HID lamp/inverter, power adapter/switching power supply, ballast, automotive electronics, etc.

Installation style: SMD/SMT

Package/Case: SSOT-6

Transistor Polarity: N-Channel

Number of channels: 2 Channel

Vds-drain-source breakdown voltage: 25 V

Id-Continuous Drain Current: 220 mA

Rds On-Drain Source On Resistance: 3.8 Ohms

Vgs - Gate-Source Voltage: - 500 mV, + 8 V

Vgs th - gate-source threshold voltage: 1.5 V

Qg-gate charge: 490 pC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 900 mW

Channel Mode:Enhancement

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: onsemi / Fairchild

Configuration: Dual

Fall Time: 4.5 ns

Forward Transconductance - Min: 0.25 S

Height: 1.1 mm

Length: 2.9 mm

Product: MOSFET Small Signal

Product Type:MOSFET

Rise time: 4.5 ns

Series: FDC6301N

3000

Subcategory: MOSFETs

Transistor Type: 2 N-Channel

Type: FET

Typical turn-off delay time: 4 ns

Typical turn-on delay time: 5 ns

Width: 1.6 mm

Part number alias: FDC6301N_NL

Unit weight: 36 mg