FDP20N50 MOSF...

  • 2022-09-23 17:35:14

FDP20N50 MOSFET tube ON

FDP20N50FDP20N50 MOSFET ON Supplier Introduction

Founded in 2009, Hanjia Technology (Shenzhen) Co., Ltd. is one of the top 100 electronic components trade enterprises in China, a director unit of Shenzhen Semiconductor Association, a supplier of military electronic components, an OEM cooperative ordering channel provider, and an international independent distributor. The company is headquartered in Hong Kong, and has independent offices and offices in Taiwan, Singapore, Shenzhen, and the United States. The company has more than 16,000 kinds of stock in stock, with annual sales of nearly one billion yuan. The company now maintains long-term and stable cooperative relations with ic original factories and agents in the United States, Japan, South Korea, Taiwan, and China. All our operation processes are in accordance with ISO9001. Quality management system implementation. Through the formalized process to control the quality and service, to ensure that customers get a quality purchasing experience. Company philosophy: 1. Hanjia Technology Goal: to become an international integrated circuit supporting service provider. 2. The spirit of Hanjia technology: realistic, efficient and win-win. …

FDP20N50 MOSFET ON Product Properties

Manufacturer: onsemi

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package/Case: TO-220-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 500 V

Id-Continuous Drain Current: 20 A

Rds On-Drain Source On Resistance: 260 mOhms

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th-gate-source threshold voltage: 3 V

Qg-gate charge: 65 nC

Pd-Power Dissipation: 250 W

Channel Mode: Enhancement

Brand Name: UniFET

Package: Tube

Trademark: onsemi / Fairchild

Configuration: Single

Fall Time: 60 ns

Height: 16.3 mm

Length: 10.67 mm

Product Type: MOSFET

Rise time: 120 ns

Series: FDP20N50F

Factory Packing Quantity: 1000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Typical turn-off delay time: 100 ns

Typical turn-on delay time: 45 ns

Width: 4.7 mm

Unit weight: 2 g