072N15N_072N15N Introduction

This starts with the process and structure of MOS. Whether it is a MOS or a diode, it is composed of semiconductor materials. We all know that the diode is composed of a pair of PN structures. See the figure below. The P-type region corresponds to the anode of the diode, and the N-type region corresponds to the anode of the diode. region corresponds to the cathode of the diode.

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

072N15N_072N15N

1.5KE100CA-E3/54

TPC8223-H UPA2750GR 4936 9936 4228GM.

057N08N 057N08NS 05852- 06000,, 06031.5K5%_.

STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.

SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.

072N15N_072N15N

040225.5K1%_BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

BYM3312 BYM3312-X BYF333 BYP332 BYS332.

0603180R5%_06031M5%_06032.2K5%_0603220R5%_060322K5%_.

072N15N_072N15N

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

At the time of t3, the DS voltage of the MOSFET drops to the voltage at the time of saturation conduction, the influence of the Millier effect becomes smaller, the Cgd capacitor becomes smaller and is charged by the external driving voltage together with the Cgs capacitor, and the voltage of the Cgs capacitor rises until the time of t4. When the C gs capacitor voltage has reached a steady state, the voltage between DS has reached a minimum, and the MOSFET is fully turned on.

relevant information