0603100R5%_0603100R5% Introduction

This starts with the process and structure of MOS. Whether it is a MOS or a diode, it is composed of semiconductor materials. We all know that the diode is composed of a pair of PN structures. See the figure below. The P-type region corresponds to the anode of the diode, and the N-type region corresponds to the anode of the diode. region corresponds to the cathode of the diode.

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

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04023.6K5%_04023.3K1%_04023.6K5%_040233R5%_0402470K5%_040247K1%_.

040N06N 042N03L 042N03MS 043N03MS 045N10N.

AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.

036N04L 0372BDP1 0372DP1 03N60C3 03P2J-T1.

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09N05

BYP342-X BYJ3411 BYH3413 BYH345 BYJ345.

BYH343 BYM3411 BYP342 BYS342 BYM345.

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0402220K5%_040222R5%_040225.5K1%_0402270R5%_04022K5%_.

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Generally 2V ~ 4V is enough. However, the MOS tube is divided into an enhancement type (normally open type) and a depletion type (normally closed type). The enhancement type tube needs a voltage to be turned on, while the depletion type tube is already in the conduction state, and the gate is added. The source voltage is to make it cut off.

The turn-on sequence can be divided into four time periods to~t1, t1~t2, t2~t3, and t3~t4, and these four time periods have different equivalent circuits.

relevant information