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2022-09-23 17:35:14
0603100K5
0603100K5%_0603100K5% Introduction
In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.
The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.
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0603180K5%_SP8K4-TB SPN4972S8RG SQ4282EY-T1-GE3 STN4972 STS8DN3LLH5.
036N04L 0372BDP1 0372DP1 03N60C3 03P2J-T1.
AO4832 AO4838 CEM3138 DMG4800LSD-13 EMB17A03G FDS6982-NL.
STC5NF20V STG8205 STG8810 STN8205AAST8RG TM8205FC.
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1.5KE170A-T
040251K1%_040251R5%_040268K1%_04028.2K5%_0402E4872BITS.
03P4J-T2-AZ 03P4M-T-AZ 03P5J-T1 03P6MG-AZ 040201AB160PF5V.
051N15N5MOS 052N06L 053P04-518 054NE8N 057N06N.
BYM3312 BYM3312-X BYF333 BYP332 BYS332.
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NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.
Generally 2V ~ 4V is enough. However, the MOS tube is divided into an enhancement type (normally open type) and a depletion type (normally closed type). The enhancement type tube needs a voltage to be turned on, while the depletion type tube is already in the conduction state, and the gate is added. The source voltage is to make it cut off.
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