The power supply voltage is as high as 48V

5A maximum peak current ( l6201 maximum 2A)

Total square root current L6201: 1A; L6202: 1.5AAA ; L6203/L6201PS: 4A

RDS (open) 0.3Ω (typical value at 25 ° C)

Cross -conductors

TTL compatible drive

] The operating frequency is as high as 100 kHz

Hot shutdown

Internal logic power supply

High efficiency

Instructions

I.C. The application of motor control in multi -power BCD technology is combined with the isolated DMOS power transistor tube as CMOS and bipolar circuits on the same chip. The best performance is achieved by optimizing the logic circuit and power level by using hybrid technology. This DMOS output transistor can operate as high as 42V under the power supply and high switching speed. All logic inputs are TTL, CMOS is compatible with μC. Each channel (semi -bridge) device is controlled by a separate logic input, and the public enables two channels. I.C. Installed in three different packages.

Electric characteristics (continued)

Power -driven timing logic control

Evaluating power consumption restrictions restrictions

In synchronous rectification, the leakage source drop VDS is shown in Figure 4 (L6202/03); the typical value of L6201 is 0.3V.

circuit description

l6201/1PS/2/3 is a new type of multi -power BCD using a new type of multi -power BCD The technology -implemented switch motor driver can integrate multiple isolation DMOS power transistors plus a mixed CMOS/bipolar control circuit. In this control, it is possible to enter TTL, CMOS, and μC compatibility, which shows the necessity of external MOS driving components. Logic drives are shown in Table 1.

Despite the equipment guarantee

cross -conducting, there is inherent dual electrode in the power DMOS structure, leading to the generation of current peaks on the sensing terminal. This is due to the charging and discharge phenomenon in the capacitor C1 and C2. When the output is switched from high to low, the current peak is related to the capacitor C1. The peaks of the same polarity from low to high are generated by C2. The previous is the capacity of the opposite low -power DMOS transistor caused by the input charging (Figure 15).

Crystal tube operation

When one of the power DMOS transistors is opened, it can be considered as a resistance RDS (on) within the recommended work range. In this case, the dispersion power is given by the following formula:

Low RDS (ON) of the multi -power BCD process can provide high current and low -power objection. The shutdown state is that one of the power DMOS transistors The VDS voltage is equal to the power supply voltage, and only the leakage current IDSS flows. The power consumption during this period is given by the following formulas:

The power consumption is very low. It can be ignored as mentioned above. In-Trinsic diode can be used as a fast-rotating diode work switch mode application. During the cycle, when the enable input is high, the two ends of the voltage reduction pipe are RDS (on) #8901; ID. When it reaches the forward voltage of the diode, it is restrained. When the MOS is turned off when the enable input is low, the diode carries all the cumulators current. The power consumed during the transition time depends on the voltage current waveform and driving mode. (See Figure 7AB and Figure 8ABC).

Breathing capacitors

to ensure the correct driving door source voltage of the power DMOS transistor. 10 all N channels must ensure the VDMOS transistor. This is easy to provide a low -power DMOS transistor power supply power, but the door voltage must be greater than the power supply voltage drive the upper transistor. This is a combination of direct DC driver and boost circuit through internal charge pump circuits. In order to effectively charge, the value of the BOOS trap capacitor should be greater than the capacitor of the input value transistor of the transistor of about 1NF. It is recommended to use the capacity of at least 10 nf as a guide. If a smaller capacitor uses the following risks: power transistors cannot be completely opened, they will display higher RDS (open). On the other hand, if the value is used, the current peak may generate resistance.

Reference voltage

Internal reference voltage. It is recommended to place a capacitor with a stitches between the capacitors. For most applications, the value of 0.22 μF should be appropriate. This pin can also prevent short -circuits on the ground: the maximum value of A. The maximum current can reach 2mA. In order to protect the equipment from shrinking by the bridge arm at the same time, the comprehensive logic control of the rail on the rail provides a dead area of more than 40 NS. When the thermal protection circuit includes a thermal protection circuit When the knot temperature reaches 150 ° C, the device will reduce the failure to the safety level, and the device restarts the input to control the signal.

Application information

During the cycle of the cycle to make the enable input high, the voltage drop on the transistor is RDS (open) #8901; IL, according to the characteristics of the diode of the source leakage. Although the device has the protection of cross -sensing, the current peak may appearInstective needles on the current due to charging/discharge phenomenon. In the application, this does not cause any problems, but causes the voltage peak resistance generated on the sensor to be shielded by the current controller circuit. When the rising time TR (see Figure 16) When the diagonal of the bridge is connected, the current begins to flow in the inductive load until the time TR reaches the maximum current IL. In this case, the scattered energy EOFF/on is: eOFF/On [RDS (on) #8901; IL2TR] #8901; 2/3 Load time TLD (see Figure 16). San is due to the transformation of the transistor of the transistor (ECOM). As a two -force DMOS crystal tube open, EON is given by the following: ELD IL2 #8901; RDS (open) #8901; 2 #8901; TLD's dissipated energy during the change process: eCom vs #8901 IL #8901; TCOM #8901; fswitch #8901; TLD

TCOM Connecting disconnect fswitch chop frequency. TF (see Figure 16) assumes that the energy is in the same form of energy as the same form of the cycle: EON/OFF [RDS (on) #8901; IL2 #8901; tf] #8901; 2/3 [123 [123 ]

Static energy

The last contribution to the dispersion of energy is due to static power currents, which is given below: equivalentity quieSEnt #8901; vs #8901 ; T Total Energy ETOT EOFF/ON+ELD+ELD+ECOM ++ opens/level+and other brightness PDI is simple:

pdis etot/ton

TR rise time of upstream time

TLD loading driver time

TF drop time

td stagnation time

T cycle

t tr+ TLD+TF+TD

DC motor speed control because I.C. integrates a complete H bridge. It is very suitable for controlling DC motors. When the speed and direction control of DC motor control are used for control, the power level is controlled. This device can achieve a current regulator like L6506 to achieve a cross -guidance amplifier used for speed control as shown in Figure 17. Only half of L6506 is used in this special configuration, and the other half can be used to control the second motor. The voltage resistance RS on the L6506 induction sensor is used to monitor the current of the motor: it compensates the inductive voltage to control the speed during the motor dynamic dynamic period. It is recommended to use the L6506 A resistor between the sensor and each sensing input; if the connection between the L6506 output and the input of L6203 requiresIn L6203 and ground. A buffer network composed of R and C must foresee a diode (byw98) connected between each power supply output pin and ground near the output pin. The following formulas can be used to calculate the value of the buffer: relative low voltage C LP/(DV/DT), where: VS is the peak of the expected maximum power supply voltage IP; DV/DT is a limit time for the limit of the output voltage (usually used in use 200V/microsecond). If the power supply cannot absorb the current, it must be used to connect a suitable large capacitor near L6203. Sometimes the capacitor with L6506 pin 17 is better. For the maximum 2A motor current L6202 can be used for similar circuit configuration, its typical power supply voltage is recommended by 24 volt.

Dual -step motor application

Dual -step motor can use one L6506 or L297, two full bridge BCD drivers and few external external external external external exterior Components. Together these three chips form a complete microprocessor and step motor interface. As shown in Figure 18 and 19, the controller is directly connected to the two bridge BCD drivers. The external component is minimized: a R.C. network is used to set the frequency of chopper, a resistor video (R1; R2) is used to establish a comparative reference voltage and a series of R and C series (see DC motor speed control)

It can be required to drive the minimum 12V (see electrical characteristics) when VS is lower; in this case, by receiving possible small increases in RDS (on RDS (on RDS (on RDS ) The power voltage value of the lowest resistance of the power output transistor may be a good solution, as shown in Figure 20.

Thermal characteristics

Thanks to the high efficiency of this device, it does not require a real heat dissipation tablet, or it can be achieved through the copper side on P.C.B.. (L6201/2). Under harsh conditions, L6203 requires a suitable cooling system. The two square copper edges are used in a similar way as shown in Figure 23. Figure 21 indicates how to be the total power consumption of L6201, because: Rth J-Amb (tj max. – tamb max) The relationship between state heat resistance and single pulse time width. Figure 23 and 24 reference L6202. For the Dofa L6203, the additional information is from Figure 25 (thermal resistance environment and total power consumption) and Figure 26 (peak transient thermal resistance vs.re pulse width), and Figure 27 refers to the single pulse transient heat resistance Essence