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2022-09-23 17:58:49
IRFB4227PBF
Transistor - FET, MOSFET - Single
manufacturer
Infineon Technologies
series
HEXFET?
Package
pipe fittings
Part status
in stock
FET type
N channel
technology
MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)
200V
Current at 25°C - Continuous Drain (Id)
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
On-resistance (max) at different Id, Vgs
24 milliohms @ 46A, 10V
Vgs(th) (maximum) at different Ids
5V @ 250μA
Gate charge (Qg) at different Vgs (max)
98nC @ 10V
Vgs (max)
±30V
Input capacitance (Ciss) at different Vds (max)
4600 pF @ 25V
FET function
-
Power dissipation (max)
330W (Tc)
Operating temperature
-40°C ~ 175°C (TJ)
installation type
through hole
Supplier Device Packaging
TO-220AB
Package/Enclosure
TO-220-3
Basic product number
IRFB4227