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2022-09-23 17:58:49
IXYT55N120A4HV
Technology company) proprietary XPT™ (Extremely Weak Punch-Through) thin wafer technology and Generation 4 (GenX4™) trench IGBTs offer lower thermal resistance, low energy loss and fast switching speeds. These devices also feature high current capability due to their positive collector-emitter voltage temperature coefficient, allowing designers to use multiple devices in parallel to meet higher current requirements and low gate charge, helping to reduce gate driver requirements and switching losses.
characteristic
Positive VCE(sat) thermal coefficient
Low Vsat, low Eon/Eoff, high inrush current capability
Low tail current
application
power inverter
battery charger
motor driven