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2022-09-23 17:58:49
IPD60N10S4L-12 10 years of precipitation only original spot
The IPD60N10S4L12ATMA1 parameter comparison table is as follows:
Manufacturer: Infineon
Product Category:MOSFET
RoHS: Environmental Labeling
Installation style: SMD/SMT
Package/Case:TO-252-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 100 V
Id-Continuous Drain Current: 60 A
Rds On-drain-source on-resistance: 9.8 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Vgs th - gate-source threshold voltage: 1.1 V
Qg-gate charge: 49 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 94 W
Fall Time: 21 ns
Height: 2.3 mm
Length: 6.5 mm