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2022-09-23 17:58:49
BYN3226
BYN3226_NTMSD6N303R2G Introduction
The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance.
As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.
BYN3226_NTMSD6N303R2G
BYI362
BYH32055 BYP32058 BYD32020A BYJ32038 BYS32048.
BYM4610 BYM4640 BYM4875 BYM81080 BYM81095.
BYH337 BYP337 BYS338 BYD3319 BYH335.
BYF32038 BYP32036 BYS32042 BYH32085A BYP32091A.
BYN3226_NTMSD6N303R2G
AP6900GSM
BYP31036 BYD31010A BYD31024A BYP31017 BYS31018.
BYM8615 BYH8638 BYN8610A BYM8628 BYN8222.
BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A.
BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A.
BYN3226_NTMSD6N303R2G
MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .
NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.
relevant information