BYH32025A_DMN4031SSD-13&Special 30V Guide

Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor). The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction. According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type.

The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance.

BYH32025A_DMN4031SSD-13&special 30V

BYM3411

BYF32018A BYD32011Z BYF32090 BYJ32056 BYP32011A.

BYF32038 BYP32036 BYS32042 BYH32085A BYP32091A.

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095.

BYN3210 BYM3210 BYM326 BYM3226A BYP326.

BYH32025A_DMN4031SSD-13&special 30V

STM6928

BYN31028Z BYN31024A BYG31013A BYN31095 BYJ31040.

BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A.

BYH31532 BYM31580 BYH31519 BYS31535 BYM31545.

BYJ337 BYN3324 BYG3333 BYN3330 BYS3312.

BYH32025A_DMN4031SSD-13&special 30V

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .

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