ISL6144 high -vol...

  • 2022-09-21 17:24:28

ISL6144 high -voltage ring MOSFET controller (2)

Use ISL6144Eval1 Z high voltage

Oring-MOSFET controller assessment in the power distribution system in multi-power, fault tolerance, redundant power supply, and connect the power supply through various power sharing, so that the load current is used to make the load current Equal plan. Regardless of the solution, an ordinary design practice includes a separate O -type power diode to protect one of the power supply of one of the inverse stress to produce a disaster -to -ground short -circuit output. In addition, if the current sharing scheme fails, the voltage of a single power supply is significantly lower than others. Although the discrete O -type diode solution is used for a period of time, it has some shortcomings due to low implementation costs. The main disadvantage is that the power increase of power increases as the power requirements is increased due to the increase in the system. The cost of lack of efficiency in some systems exceeds the realization of ISL6144 and the power field effect transistor. The Type 20A O -type ring diode is about 10W. Many diodes are connected parallel to help allocate calories. In contrast, when the field of the field effect is 5MΩ, the loss is 2W, which constitutes a decrease of 80%. In terms of power supply when it is parallel, the power saving effect is significant. The disadvantage of another O -type diode using the O -type ring is to detect the A -type ring diode that detects short -circuit or open circuits to endanger the reliability of the power system. The two -pole pipe opened the system to a single point failure when the diode was short -circuited to the technical personnel of the maintenance system. I do not know the failure of this time.

ISL6144 ring MOSFET controller and large -size N -channel power MOSFET improved the distribution efficiency and available power O -type ring diode in large current applications. It may be a pump -shaped MOSFET for the+9V to+75V system. The internal charging provides a floating gate -driven MOSFET for the N channel. The input/output off-line trip point VOUUT-VIN " can be programmed by two external resistors (R1