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2022-09-21 17:24:28
ISL6144 high -voltage ring MOSFET controller (1)
The ISL6144 ring MOSFET controller and the N -channel power MOSFET of the appropriate size increase the efficiency and availability of the power distribution replacement power O -type diode in large current applications. In the system in multi -power supply, fault tolerance, and redundant power distribution, similar power supply to the load current of various power distribution schemes. Regardless of the solution, a common design practice is to include a separate O -type power diode to prevent the reverse reverse. If one of the power supply generates catastrophic output, the ground is short -circuited. In addition, the reverse current fails and the power supply voltage is significantly lower than other voltage if the current sharing scheme fails. Although the discrete O -type diode solution has been used for a period of time, it is very cheap, and it has some shortcomings. The main disadvantage is that the power increase of power increases as the power requirements of the power requirement increases. Another disadvantage diode in Oring will not be able to detect a short -circuit or opening O -type ring diode to endanger the reliability of the power system. When the two -pole diode is reduced, when the diodes are short circuit, the system will have a single point failure that is harmful to the technical personnel of the maintenance system but do not know the failure this time. ISL6144 can be used for floating grid drivers for 9V to 75V systems with similar functions and internal charge pumps to provide N -channel ring MOSFETs. The high -speed (HS) comparator protects the public bus to place MOSFET below 300NS by turning off the short -circuit power supply and ensure low reverse current. An external resistance programmable HS detection level comparator allows users to set the N-channel MOSFET VOUT-VIN " trigger point to adjust the control sensitivity of the power supply to provide noise.
The delay adjustment (HR) amplifier provides a slow -off -cutting O -grid field effect tube. This shutdown is 100 μs less than one of the power supply. This slow cutting mechanism also responds to the output voltage