AD1583BRT-REEL7_AD1991ASV Introduction

In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity. Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity.

Systems with a communication interface often require an external application-specific integrated circuit (ASIC) or a dedicated host-controlled microprocessor, but this reduces the flexibility of the design architecture, increases complexity, and takes up space on the circuit board. . The newly introduced C2000 F2838x microcontrollers, however, do not rely on external ASICs, thereby reducing the overall solution size and the amount of material used.

AD1583BRT-REEL7_AD1991ASV

AD1876JN

AD1580BRTZ-REEL7 AD1580BRTZ-REEL7 AD1580BRTZ-REEL7 AD1580BRTZ-REEL7/AD1580BRT AD1582ART.

AD1139JD AD1154AD AD1170 AD1172-2AUJZ AD1173.

AD1385KD AD1403AN AD1403N AD1403N AD15/112.

AD1580BRT-RL7 AD1580BRTZ AD1580BRTZ AD1580BRTZ-R2 AD1580BRTZ-REEL.

AD1583BRT-REEL7_AD1991ASV

AD22222B3

AD1584ART-RELL7 AD1584ARTZ AD1584ARTZ AD1584ARTZ-R2 AD1584ARTZ-REEL7.

AD1583BRTZ-RL7 AD1583CRT-REEL7 AD1583CRT-RL7 AD1583CRTZ AD1583CRTZ.

AD1583CRTZ-REEL7 AD1584ART-R2 AD1584ART-REEL AD1584ART-REEL7 AD1584ART-REEL7.

AD1582ART AD1582ART-REEL7 AD1582ART-REEL7 AD1582ART-REEL7 AD1582ART-RELL7.

AD1583BRT-REEL7_AD1991ASV

The BAW filter is more suitable for frequencies above 2.5GHz. The manufacturing process of the BAW filter is also very consistent with the existing IC manufacturing process, and is suitable for overall integration with other active circuits. .

?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention. In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure.

relevant information