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2022-09-23 17:58:49
NVB072N65S3
Manufacturer: onsemi
Product Type:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Enclosure: D2PAK-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - C continuous drain current: 44 A
Rds On - Drain-Source Resistance: 72 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - gate-source threshold voltage: 2.5 V
Qg - Gate Charge: 82 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power consumption: 312 W
Channel Mode:Enhancement
Qualification: AEC-Q101
Company Name: SuperFET III
Package:Reel
Package:Cut Tape
Brand: onsemi
Configuration:Single
Fall Time: 32 ns
Mutual Conductance - Min: 29.7 S
Product Type:MOSFET
Rise time: 50 ns
Series:SuperFET3
Original packaging quantity: 800
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Standard off-delay time: 65.9 ns
Standard turn-on delay time: 26.3 ns
Weight per piece: 1.485 g