FDG6317NZ_SH8K5TB Introduction

Low-power mos is a planar structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units. The power mos used on electric vehicles is a three-dimensional structure.

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

FDG6317NZ_SH8K5TB

FQT4N25

FDB150N10 FDB3652 HUF75645S3ST HUF76645S3S HUFA76645S3ST_F085.

FDU044AN03L FDU068AN03L FDU6644 FDU6676AS FDU6682.

FDG6304P FDG6317NZ FDG8850NZ FDS6812A-NL FDS6814-NL.

NDS9952A-NL NDS9952-NL FDD8424H FDD8424H_F085 FDS4885C-NL.

FDG6317NZ_SH8K5TB

MMDFS6N303R2G

FDS9936A-NL FDS9936-NL HUF76113DK8T NDS8926-NL NDS8936-NL.

32F9729 High Frequency Devices 38MI 411450-003-28 5207C 5962-0423001QXC Analog IC.

NDS9936A-NL NDS9936-NL NDS9956A-NL NDS9956-NL RF1K49088.

FDU6688 FDU6696 FDU6760A FDU6770A FDU8586.

FDG6317NZ_SH8K5TB

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .

relevant information