GD32F405RGT6_AO4842 Introduction

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first.

GD32F405RGT6_AO4842

BYN3630

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

GD32F405RGT6_AO4842

NTMD5838NLR2G

GD32F105RGT6 GD32F105R8T6 GD32F105VET6 GD32F107VGT6 GD32F107ZGT6.

GD32F303VGT6 GD32F330CBT6 GD32F330C8T6 GD32F330G8U6 GD32F330RBT6.

GD32F103C8T6 GD32F103RCT6 GD32F103CBT6 GD32F103C8T6.

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

GD32F405RGT6_AO4842

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .

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