GD32F350C6T6

  • 2022-09-23 17:58:49

GD32F350C6T6

GD32F350C6T6_AO4840&Special 30V Guide

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

GD32F350C6T6_AO4840&special 30V

CEM8208

BYP31538 BYP31510 BYP31575 BYH31574 BYD31523A BYH31532 BYM31580 BYH31519 BYS31535 BYM31545 .

However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. . Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube. The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

BYC4322 BYM4310 BYM4322 BYM4316 BYC4312 BYM438 BYS441 BYN4458 BYE4625Z BYM4612 .

GD32F350C6T6_AO4840&special 30V

SI4916DY-T1-E3

BYM8615 BYH8638 BYN8610A BYM8628 BYN8222 BYM31020 BYS31010 BYJ3104 BYH3105 BYP3109.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

BYP31036 BYD31010A BYD31024A BYP31017 BYS31018 BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A .

BYM4610 BYM4640 BYM4875 BYM81080 BYM81095 BYM826 BYM8311 BYM8315 BYH8415 BYM8415.

GD32F350C6T6_AO4840&special 30V

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

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