72RPXR1K_25RXR50KLF Introduction

Combining EtherCAT, Ethernet and CAN FD: In terms of galvanically isolated architecture, the new microcontrollers feature a fast serial interface with 8 receive channels, enabling chip-to-chip communication at speeds up to 200 Mbps with fewer pins. .

The charger can provide a power density of 155 mW/mm2 (100 W/in2), which is about twice higher than the market. The new buck-boost charger helps engineers reduce solution size and bill of materials (BOM) and is TI's only device that fully integrates: .

72RPXR1K_25RXR50KLF

72RXR500

ACA1205S7PO ACA1205S7PO IC ACA1206R ACA1206RS7P2 ACA2401S7P0 ACA2402S7PO ACA2402S7TR ACA2407ES7P0 ACA2407RS7P9 ACA2407S7PO .

CVF51500JLF CAW101R50JLF CAW10R220JLF CAW533R0JLF PFC-W0805LF-03-1052-B.

TI's chargers help reduce power consumption through heat dissipation, allowing video doorbells to last longer with their batteries. . For example, video doorbells that normally rely on AC power to operate can be guaranteed when the main power source is switched to a battery pack.

The 9200 SSD provides high capacity, fast speed, and low latency for demanding functions such as application and database acceleration, online transaction processing (OLTP), high-frequency trading, and high-performance computing, and is one of the first NVMe SSDs on the market with capacities over 10 TB. one. .

72RPXR1K_25RXR50KLF

664-A-1002A7

5B37 5B37-J-03 5B37-K-02 5B41-03 Other passive components 6525ACA 700-TBR24 71006AE2 71008AE1 71010AE0 71021AE1 .

5962-8777101MCA=OP400AY/883B 5962-8856501CA 5962-8856502CA 5962-8859301MPA=OP200AZ/883 5962-8872101PA 5962-8876403XA 5962-8954401PA 5962-8965702LA 5962-8969701XA 5962-8980101CA 。

TPS560430XFDBVR XTR117AIDGKR CSD15380F3T MSP-EXP432P401R TPS2051BDBVR.

TPS54310PWPR TPA3116D2DADR LM3429MHX/NOPB DP83867CRRGZT TPS62172DSGR.

72RPXR1K_25RXR50KLF

The BAW filter is more suitable for frequencies above 2.5GHz. The manufacturing process of the BAW filter is also very consistent with the existing IC manufacturing process, and is suitable for overall integration with other active circuits. .

As a common piezoelectric material, quartz exhibits a linear response under high voltage and high pressure, but there is no suitable method to make quartz into a thin film deposit on a Si substrate. Appropriate BAW piezoelectric materials require high electromechanical coupling coefficient, low electromechanical loss, high thermal stability, and conform to IC process technology.

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