GD32F105ZET6_SI9936DY-T1-E3 Introduction

So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first.

Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel. According to the carrier of the conduction channel, it can be divided into N channel and P channel. A MOS tube is a semiconductor device in which unipolar carriers participate in conduction.

GD32F105ZET6_SI9936DY-T1-E3

TM8205FC

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

GD32F105ZET6_SI9936DY-T1-E3

STS8DNH3LL

BYP31036 BYD31010A BYD31024A BYP31017 BYS31018 BYF3104 BYH3108 BYF3109 BYM31032 BYN31333A .

GD32F105RGT6 GD32F105R8T6 GD32F105VET6 GD32F107VGT6 GD32F107ZGT6.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

GD32F103RBT6 GD32F103RET6 GD32F103VET6 GD32F103VCT6 GD32F103ZET6.

GD32F105ZET6_SI9936DY-T1-E3

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

relevant information