GD32F105RCT6_SI9936BDY-T1-E3 Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

Field effect transistors are divided into junction type and insulated gate type, among which the insulated gate type is also called MOS tube (Metal Oxide Semiconductor). According to whether the inversion layer exists in the case of no electricity, MOS tubes can be divided into enhancement type and depletion type. The core of power semiconductors is the PN junction. From diodes, triodes to field effect transistors, various applications are made according to the characteristics of the PN junction.

GD32F105RCT6_SI9936BDY-T1-E3

BYP61042

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

BYS3105 BYP3105 BYJ31020A BYH31012A BYJ31012A BYP3104 BYF31010A BYP31013A BYS31010A BYH31055 .

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

GD32F105RCT6_SI9936BDY-T1-E3

DMN6070SSD-13

GD32F303VCT6 GD32F303CCT6 GD32F303VET6 GD32F303RGT6 GD32F303RET6.

GD32F105VCT6 GD32F105RBT6 GD32F105RCT6 GD32F105ZET6 GD32F105VGT6.

GD32F207VCT6 GD32F207RCT6 GD32F207RGT6 GD32F207ZGT6 GD32F303RCT6.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

GD32F105RCT6_SI9936BDY-T1-E3

NCE2302C NCE8205t NCE2004Y NCE2006Y NCE2007NS.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

relevant information